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PRODUCT

LCD/ Solar/ LED

III-V nitride epitaxial crystals

→ Material Non polar GaN on Sapphire
→ Characteristic Growth of nonpolar nitride on C-plane sapphire substrate
→ Thickness 2~3um
→ Advantage Reduce quantum localization Stark effect
  • Under high current density, the luminous efficiency still maintains 90%
  • 5 times brighter
  • Increase the surface light emission of UV LED